Nexperia BUK9K89-100E,115 MOSFET 双N沟道 40 V，9.4 毫欧 逻辑电平 MOSFET

Technology: Si

Unit Weight: 112.200 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Qg - Gate Charge: 16.8 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 38 W

Vgs - Gate-Source Voltage: - 15 V, + 15 V

Id - Continuous Drain Current: 12.5 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 75.8 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 1.7 V