Nexperia GAN140-650EBEZ 氮化镓场效应管 SOT8074 650V 17A 场效应管

Technology: GaN

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 1.2 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 113 W

Id - Continuous Drain Current: 17 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 140 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V