Nexperia GAN190-650EBEZ 氮化镓（GaN）场效应晶体管 650 V，190 mOhm，DFN 5 mm x 6 mm 封装

Fall Time: 4 ns

Rise Time: 4 ns

Technology: GaN

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 2.8 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 125 W

Vgs - Gate-Source Voltage: - 7 V, + 7 V

Typical Turn-On Delay Time: 1.4 ns

Typical Turn-Off Delay Time: 1.7 ns

Id - Continuous Drain Current: 11.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 190 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V