Nexperia GAN3R2-100CBEAZ 氮化镓场效应晶体管 SOT8072 100V 60A 场效应晶体管

Technology: GaN

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 12 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 394 W

Vgs - Gate-Source Voltage: - 6 V, + 6 V

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 3.2 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V