Nexperia MJD31CJ 双极型晶体管 MJD31C/SOT428/DPAK

Technology: Si

Unit Weight: 316.353 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 15 W

DC Current Gain hFE Max: 50

Gain Bandwidth Product fT: 3 MHz

Emitter- Base Voltage VEBO: 6 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 10

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 1.2 V