Nexperia MJD42CJ 双极型晶体管 BJTs - 80 V，8 A NPN 高功率双极型晶体管

Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 15 W

Gain Bandwidth Product fT: 3 MHz

Emitter- Base Voltage VEBO: 6 V

Continuous Collector Current: 6 A

Maximum DC Collector Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 30 at 0.3 mA, 4 V

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 1.5 V