Nexperia NGW30T60M3DFQ IGBT晶体管 SOT429 600V 30A TRNCH
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ModelNGW30T60M3DFQ
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 285 W
Gate-Emitter Leakage Current: 200 nA
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.4 V
Continuous Collector Current at 25 C: 75 A
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