Nexperia NGW30T60M3DFQ IGBT晶体管 SOT429 600V 30A TRNCH

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 285 W

Gate-Emitter Leakage Current: 200 nA

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.4 V

Continuous Collector Current at 25 C: 75 A