Nexperia NP100T12P2T3Z IGBT模块 0.5 V至1.0 V，峰值1.5 A，11毫欧，负载开关

Technology: Si

Mounting Style: Screw Mount

Pd - Power Dissipation: 20 mW

Gate-Emitter Leakage Current: 500 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.65 V

Continuous Collector Current at 25 C: 100 A