Nexperia NSF030120L4A0Q 碳化硅MOSFET，单个，N沟道，67安，1.2千伏，45毫欧，TO-247，4引脚

No. of Pins: 4

Channel Type: N Channel

Power Dissipation: 306 W

RDS(ON) Test Voltage: 18 V

Transistor Case Style: TO-247

Drain Source Voltage Vds: 1.2 kV

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 67 A

Mosfet Module Configuration: Single

Drain Source On State Resistance: 45 mOhm

Gate Source Threshold Voltage Max: 2.9 V

Datasheet