Nexperia NX6020CAKSX MOSFETs 60 V，单N沟槽MOSFET

Fall Time: 14 ns, 25 ns

Rise Time: 7 ns, 11 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 430 pC, 350 pC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 330 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 6 ns, 13 ns

Typical Turn-Off Delay Time: 20 ns, 48 ns

Id - Continuous Drain Current: 170 mA, 160 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 230 mS, 150 mS

Rds On - Drain-Source Resistance: 4.5 Ohms, 7.5 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V, 50 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V, 2.1 V