Nexperia NXV55UNR MOSFET 20 V，P沟槽型P沟道MOSFET

Fall Time: 8 ns

Rise Time: 13 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 8.7 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 340 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 4 ns

Typical Turn-Off Delay Time: 32 ns

Id - Continuous Drain Current: 2.3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 9.4 S

Rds On - Drain-Source Resistance: 66 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 900 mV