Nexperia PBSM5240PFH,115 MOSFETs 15 V 低 VCEsat NPN/PNP 晶体管

Technology: Si

Unit Weight: 6.750 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 890 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel, PNP

Pd - Power Dissipation: 1.1 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Id - Continuous Drain Current: 660 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 580 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 700 mV