Nexperia PBSS4021NX,115 双极型晶体管 BJTs - 20 V，7 A NPN 低 VCEsat 晶体管

Technology: Si

Unit Weight: 130.500 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 600 mW

Gain Bandwidth Product fT: 115 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 20 V

Continuous Collector Current: 7 A

Maximum DC Collector Current: 7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 300

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 137 mV