Nexperia PBSS4140T,215 双极型晶体管 BJTs - 40 V，1 A NPN 低 VCEsat 晶体管

Width: 1.4 mm

Height: 1 mm

Length: 3 mm

Technology: Si

Unit Weight: 1 g

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 300 at 100 mA, 2 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 8.33E-02

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 300

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 370 mV