Nexperia PBSS4140U,135 双极型晶体管 BJTs - 60 V，1 A NPN/PNP 低 VCEsat 晶体管

Width: 1.35 mm

Height: 1 mm

Length: 2.2 mm

Technology: Si

Unit Weight: 5.600 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 350 mW

DC Current Gain hFE Max: 300 at 1 mA, 5 V

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 300 at 1 mA, 5 V, 300 at 500 mA, 5 V, 200 at 1 A, 5 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 500 mV