Nexperia PBSS4160DPN,115 双极型晶体管 BJTs - 60 V，1 A NPN/PNP 低 VCEsat 晶体管

Width: 1.7 mm

Height: 1 mm

Length: 3.1 mm

Technology: Si

Unit Weight: 11.180 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 290 mW, 420 mW

DC Current Gain hFE Max: 250 at 1 mA, 5 V

Gain Bandwidth Product fT: 220 MHz, 185 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 1 A, - 900 mA

Maximum DC Collector Current: 1 A, 900 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 200 mV, 250 mV