Nexperia PBSS4630PA,115 双极型晶体管 BJTs - 20 V；1 A PNP 低 VCEsat (BISS) 晶体管

Width: 2.1 mm

Height: 0.61 mm

Length: 2.1 mm

Technology: Si

Unit Weight: 110 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2.1 W

DC Current Gain hFE Max: 450

Gain Bandwidth Product fT: 115 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 6 A

Maximum DC Collector Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 180

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 210 mV