Nexperia PBSS5220T,215 双极型晶体管 BJTs - 20 V，2 A PNP 低 VCEsat 晶体管

Width: 1.4 mm

Height: 1 mm

Length: 3 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 225 at 100 mA, 2 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 20 V

Continuous Collector Current: - 2 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 225

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 250 mV