Nexperia PBSS5440D,115 双极型晶体管 BJTs - 40 V，4 A PNP 低 VCEsat 晶体管

Width: 1.7 mm

Height: 1 mm

Length: 3.1 mm

Technology: Si

Unit Weight: 20 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2.5 W

DC Current Gain hFE Max: 200 at 500 mA, 2 V

Gain Bandwidth Product fT: 110 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 200 at 500 mA, 2 V, 200 at 1 A, 2 V, 175 at 2 A, 2 V, 80 at 4 A, 2 V, 30 at 6 A, 2 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 320 mV