Nexperia PBSS5580PA,115 双极型晶体管 BJTs - 20 V，6 A PNP 低 VCEsat (BISS) 晶体管

Width: 2.1 mm

Height: 0.61 mm

Length: 2.1 mm

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2.1 W

DC Current Gain hFE Max: 265

Gain Bandwidth Product fT: 110 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: - 4 A

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 70

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 265 mV