Nexperia PBSS9110Y,115 双极晶体管 BJTs PBSS9110Y/SOT363/SC-88

Width: 1.35 mm

Height: 1 mm

Length: 2.2 mm

Technology: Si

Unit Weight: 5.708 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 150 at 1 mA, 5 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 120 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 150 at 1 mA, 5 V, 150 at 250 mA, 5 V, 150 at 500 mA, 5 V, 125 at 1 A, 5 V

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 320 mV