Nexperia PHB32N06LT,118 N沟道TrenchMOS标准级MOSFET

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Qg - Gate Charge: 17 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 97 W

Vgs - Gate-Source Voltage: - 15 V, + 15 V

Id - Continuous Drain Current: 34 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 37 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2 V