Nexperia PHP18NQ10T,127 MOSFETs PHP18NQ10T/SOT78/SIL3P

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 21 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 79 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 18 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 90 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2 V