Nexperia PMBTA45,215 双极型晶体管 BJTs - 500 V，150 mA NPN 高压低 VCEsat 晶体管

Width: 1.4 mm

Height: 1 mm

Length: 3 mm

Technology: Si

Unit Weight: 8.052 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 100

Gain Bandwidth Product fT: 35 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 500 V

Continuous Collector Current: 150 mA

Maximum DC Collector Current: 150 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 50

Collector- Emitter Voltage VCEO Max: 500 V

Collector-Emitter Saturation Voltage: 65 mV