Nexperia PMCM4401UNEZ MOSFET 20 V，互补沟槽MOSFET

Fall Time: 10 ns

Rise Time: 23 ns

Technology: Si

Unit Weight: 0.450 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 9 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.3 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 4.4 ns

Typical Turn-Off Delay Time: 27 ns

Id - Continuous Drain Current: 5.4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 22 S

Rds On - Drain-Source Resistance: 43 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 400 mV