Nexperia PMCPB5530XAX MOSFETs 30 V，互补N沟道/ P沟道沟槽MOSFET

Fall Time: 25 ns, 135 ns

Rise Time: 2 ns, 2.3 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 6.6 nC, 8.8 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 1.6 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 6.5 ns, 11 ns

Typical Turn-Off Delay Time: 10 ns, 55 ns

Id - Continuous Drain Current: 3.6 A, 4.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 66 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 900 mV