Nexperia PMCXB290UEZ MOSFET 20 V，互补N/P沟槽MOSFET

Fall Time: 3 ns, 3.7 ns

Rise Time: 3 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: Complementary N/P-Channel Trench MOSFET

Qg - Gate Charge: 600 pC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 6 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 1 ns

Typical Turn-Off Delay Time: 5 ns, 6 ns

Id - Continuous Drain Current: 570 mA, 2.3 A, 930 mA, 3.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.2 S, 1.9 S

Rds On - Drain-Source Resistance: 320 mOhms, 770 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V, 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V, 1 V