Nexperia PMDPB30XNAX MOSFETs PMDPB30XNA/SOT1118/HUSON6

Fall Time: 25 ns

Rise Time: 2.3 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 6.6 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.2 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 6.5 ns

Typical Turn-Off Delay Time: 10 ns

Id - Continuous Drain Current: 4.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 8 S

Rds On - Drain-Source Resistance: 34 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 900 mV