Nexperia PMDPB56XNEAX MOSFETs 20 V 双P沟槽MOSFET

Width: 2 mm

Height: 0.65 mm

Length: 2 mm

Fall Time: 7 ns, 7 ns

Rise Time: 20 ns, 20 ns

Technology: Si

Unit Weight: 6.750 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 5 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 8.33 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 9 ns, 9 ns

Typical Turn-Off Delay Time: 19 ns, 19 ns

Id - Continuous Drain Current: 3.1 A, 31 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 12 S, 12 S

Rds On - Drain-Source Resistance: 55 mOhms, 55 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 750 mV