Nexperia PMDPB58UPE,115 MOSFETs PMDPB58UPE/SOT1118/HUSON6

Technology: Si

Unit Weight: 6.750 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 9.5 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.21 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Id - Continuous Drain Current: 4.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 58 mOhms, 58 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 950 mV