Nexperia PMDT290UCEH 汽车应用用MOSFET NRND PMDT290UCE/SOT666/SOT6

Fall Time: 31 ns, 72 ns

Rise Time: 4 ns, 30 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 680 pC, 1.14 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 1.09 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 6 ns, 18 ns

Typical Turn-Off Delay Time: 86 ns, 80 ns

Id - Continuous Drain Current: 800 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.6 S, 610 mS

Rds On - Drain-Source Resistance: 380 mOhms, 850 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 500 mV, 1.3 V