Nexperia PMDXB550UNEZ MOSFETs PMDXB550UNE/SOT1216/DFN1010B-6

Fall Time: 3 ns

Rise Time: 7 ns

Technology: Si

Unit Weight: 1.290 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 1.05 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 4.03 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 4 ns

Typical Turn-Off Delay Time: 12 ns

Id - Continuous Drain Current: 590 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 600 mS

Rds On - Drain-Source Resistance: 670 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 450 mV