Nexperia PMG85XPH MOSFET 30 V，双通道N沟槽MOSFET

Fall Time: 25 ns

Rise Time: 35 ns

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 7.2 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 725 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 39 ns

Id - Continuous Drain Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 6.3 S

Rds On - Drain-Source Resistance: 90 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.15 V