Nexperia PMH400UNEH MOSFET 30 V，N沟槽型MOSFET

Fall Time: 2 ns

Rise Time: 2 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 620 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 660 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 1 ns

Typical Turn-Off Delay Time: 4 ns

Id - Continuous Drain Current: 900 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.6 S

Rds On - Drain-Source Resistance: 460 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 950 mV