Nexperia PMPB215ENEAHP MOSFETs 80 V，单N沟槽MOSFET

Fall Time: 3 ns

Rise Time: 2 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 4.8 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 15.6 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 3.5 ns

Typical Turn-Off Delay Time: 9.5 ns

Id - Continuous Drain Current: 2.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 7 S

Rds On - Drain-Source Resistance: 230 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 2.7 V