Nexperia PMPB33XP,115 MOSFET 20 V，单P沟槽MOSFET

Technology: Si

Unit Weight: 6.750 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 23 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 3.5 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Id - Continuous Drain Current: 7.9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 37 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 900 mV