Nexperia PMX300UNEZ MOSFET 20 V，P沟槽型P沟道MOSFET

Technology: Si

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 1.4 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Id - Continuous Drain Current: 820 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 250 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 900 mV