Nexperia PMX400UPEZ MOSFET 20 V，P沟槽型P沟道MOSFET

Fall Time: 35 ns

Rise Time: 17 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 1.6 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 4 ns

Typical Turn-Off Delay Time: 50 ns

Id - Continuous Drain Current: 900 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 2.5 S

Rds On - Drain-Source Resistance: 500 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 950 mV