Nexperia PMZ200UNEYL MOSFET 20 V，N沟槽型MOSFET

Width: 0.6 mm

Height: 0.48 mm

Length: 1 mm

Fall Time: 3 ns

Rise Time: 10 ns

Technology: Si

Unit Weight: 0.891 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 1.6 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 760 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 5 ns

Typical Turn-Off Delay Time: 17 ns

Id - Continuous Drain Current: 1.4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 250 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 950 mV