Nexperia PMZ290UNEYL PMZ290UNE/SOT883/XQFN3

Vgs(th): 0.95V

Vgs (Max): 8V

Gate Charge (Qg): 0.68nC

Power consumption: 360mW|2.7W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 20V

Continuous drain current: 1A

Input Capacitance (Ciss): 83pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 380mOhm

Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V

Datasheet