Nexperia PMZB600UNEYL MOSFET 20 V，单P沟槽MOSFET

Technology: Si

Unit Weight: 0.680 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 700 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 715 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Id - Continuous Drain Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 620 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 450 mV