Nexperia PSMN010-80YLX MOSFET N沟道 30 V 11.6 mohm 逻辑电平 MOSFET，采用 NextPower 技术，封装为 LFPAK

Fall Time: 36 ns

Rise Time: 40 ns

Technology: Si

Unit Weight: 91.420 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 84.7 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 194 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 23 ns

Typical Turn-Off Delay Time: 62 ns

Id - Continuous Drain Current: 84 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 7.4 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 1.4 V