Nexperia PSMN011-60MLX MOSFET N沟道 60 V 11.3 mohm 标准级 MOSFET，封装为LFPAK33

Fall Time: 15.5 ns

Rise Time: 20.2 ns

Technology: Si

Unit Weight: 57.700 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Triple

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 37.2 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 91 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 13.3 ns

Typical Turn-Off Delay Time: 27.7 ns

Id - Continuous Drain Current: 61 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 11.3 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.7 V