Nexperia PSMN013-40VLDX MOSFET N沟道 60 V，12.5 mOhm，逻辑电平MOSFET，采用TrenchMOS技术，封装为LFPAK56D

Fall Time: 6.5 ns

Rise Time: 8.1 ns

Technology: Si

Unit Weight: 112.200 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 13.9 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 46 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 5.6 ns

Typical Turn-Off Delay Time: 9.1 ns

Id - Continuous Drain Current: 42 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 13.6 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.2 V