Nexperia PSMN013-60HLX MOSFET N沟道 60 V，10 mOhm，标准级 MOSFET，LFPAK56D 封装，采用 TrenchMOS 技术

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Qg - Gate Charge: 22.4 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 64 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 12.5 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.1 V