Nexperia PSMN030-60YS,115 MOSFETs N沟道 100 V，31 mOhm，逻辑电平MOSFET，LFPAK56D封装，采用TrenchMOS技术

Technology: Si

Unit Weight: 91.420 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Qg - Gate Charge: 13 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 56 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 29 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 24.7 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2 V