Nexperia PSMN0R9-30ULDX MOSFET N沟道 30 V，0.87 毫欧，300 A 逻辑电平 MOSFET，采用 NextPowerS3 技术，封装为 LFPAK56

Fall Time: 42.6 ns

Rise Time: 49.8 ns

Technology: Si

Unit Weight: 93.270 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 109 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 227 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 38.1 ns

Typical Turn-Off Delay Time: 63 ns

Id - Continuous Drain Current: 300 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.09 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V