Nexperia PSMN1R1-100CSEJ MOSFET N沟道 25 V 1.15 毫欧 逻辑电平 MOSFET，采用 NextPower 技术，封装为 LFPAK

Fall Time: 131 ns

Rise Time: 91 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 339 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.55 kW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 87 ns

Typical Turn-Off Delay Time: 212 ns

Id - Continuous Drain Current: 430 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.09 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 3.6 V