Nexperia PSMN1R8-30BL,118 MOSFET

Vgs(th): 2.15 V

Vgs (Max): 20V

Gate Charge (Qg): 170nC

Power consumption: 270W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 100A

Input Capacitance (Ciss): 10180pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 1.8mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V