Nexperia PSMN1R8-80SSFJ MOSFET N沟道 40 V，1.9 mOhm，200 A 标准级 MOSFET，采用 LFPAK56 封装，使用优化的 NextPowerS3 Schottky-Plus 技术

Fall Time: 45 ns

Rise Time: 33 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 148 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 341 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 40 ns

Typical Turn-Off Delay Time: 90 ns

Id - Continuous Drain Current: 270 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2.5 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 4 V